AMD researchers have become the first in the semiconductor industry to achieve critical research milestones for next-generation transistor development. In lab work to be fully unveiled in June, AMD researchers have created and demonstrated a high-performance transistor that is up to 30% faster than the best published PMOS (P-channel metal-oxide semiconductor) transistor today. The transistor employs proprietary AMD technologies involving what is commonly referred to as Fully Depleted Silicon-on-Insulator. In related research, AMD researchers have also become the first in the industry to demonstrate a strained silicon transistor achieving 20-25% higher performance than conventional strained silicon devices through the successful use of metal gates. These achievements are key milestones in AMD?s aggressive process technology roadmap, enabling the design of future microprocessors that can meet customers? top requirements.

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